The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Jun. 13, 2023
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Ming Tsang Tsai, Singapore, SG;

Khee Yong Lim, Singapore, SG;

Thanh Hoa Phung, Singapore, SG;

Zar Lwin Zin, Singapore, SG;

Myo Aung Maung, Singapore, SG;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/83 (2025.01); H10D 30/01 (2025.01); H10D 30/66 (2025.01); H10D 62/13 (2025.01);
U.S. Cl.
CPC ...
H10D 30/832 (2025.01); H10D 30/024 (2025.01); H10D 30/051 (2025.01); H10D 30/668 (2025.01); H10D 62/155 (2025.01); H10D 62/159 (2025.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to gated body transistors and methods of manufacture. The structure includes: at least one fin structure composed of semiconductor material and including a channel region between a source region and a drain region; and a gated body under the channel region of the at least one fin structure.


Find Patent Forward Citations

Tsai, Ming. (2026). Gated body transistors (U.S. Patent No. 12772507). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772507

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…