The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2026

Filed:

Jan. 03, 2023
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Yongshun Sun, Singapore, SG;

Eng Huat Toh, Singapore, SG;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/30 (2023.01); H10B 43/40 (2023.01); H10D 30/01 (2025.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10B 43/30 (2023.02); H10B 43/40 (2023.02); H10D 30/0413 (2025.01); H10D 30/69 (2025.01); H10D 64/021 (2025.01);
Abstract

The disclosure provides a structure including a transistor coupled to terminals for injecting charge carriers into a pair of spacers. The structure includes a gate structure over a substrate and having a pair of spacers on opposite horizontal ends of the gate structure. A pair of source/drain (S/D) regions is within the substrate, and each S/D region is below a respective one of the pair of spacers. Each of the pair of S/D regions is coupled to one of a pair of terminals configured to inject charge carriers into either of the pair of spacers.


Find Patent Forward Citations

Quick Actions:

Sun, Yongshun. (2026). Transistor coupled to terminals for injecting charge carriers into pair of spacers (U.S. Patent No. 12777650). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777650

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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