The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Oct. 01, 2023
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
A device includes an antifuse structure. The antifuse structure includes a first contact structure and a second contact structure in a first interlevel dielectric (ILD) layer, an opening arranged between the first contact structure and the second contact structure in the first ILD layer, and a dielectric capping layer lining at least sidewalls of the opening. A second ILD layer is arranged over the first ILD layer and in the opening. The second ILD layer lines the dielectric capping layer on at least the sidewalls of the opening. A third contact structure is arranged between the first contact structure and the second contact structure. The third contact structure includes a first portion in the opening.