Singapore, Singapore

Shu Hui Lee

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Globalfoundries Singapore Pte. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shu Hui Lee. Retrieved from https://idiyas.com/inventor/shu-hui-lee-gxcoa5ld

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Shu Hui Lee: Semiconductor Device Inventor

Introduction

Shu Hui Lee is an inventor based in Singapore, SG, associated with GlobalFoundries Singapore Pte. Ltd. His patent work includes a semiconductor device design focused on an antifuse structure.

Latest Patents

Lee is named on 1 patent: “Semiconductor Devices and Methods of Forming the Same.” The invention describes an antifuse structure with first and second contact structures in a first interlevel dielectric (ILD) layer, separated by an opening. A dielectric capping layer lines at least the opening’s sidewalls, while a second ILD layer is arranged over the first layer and within the opening. A third contact structure is positioned between the first and second contact structures, with a portion extending into the opening.

Career Highlights

Lee’s listed patent reflects work in semiconductor device structures and fabrication methods. The patent identifies GlobalFoundries Singapore Pte. Ltd. as the company associated with his work.

Collaborations

Lee’s listed coworkers include Jianxun Sun and Juan Boon Tan. Their names are associated with his professional and patent-related context.

Conclusion

Shu Hui Lee’s patent contribution concerns an antifuse structure that integrates dielectric layers and contact structures, highlighting his work in semiconductor device innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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