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Force Mos Technology Co., Ltd.

USPTO Granted Patents = 88

Forward Citations = 403

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9 inventors (with patents filed for the assignee):

Fu-Yuan Hsieh (83 out of 103 patents)

Kao-Way Tu (4 out of 11 patents)

Yuan-Shun Chang (3 out of 9 patents)

4. Po-An Tsai (2 out of 2 patents)

5. Huan-Chung Weng (2 out of 2 patents)

6. Yi-Sheng Lin (1 out of 43 patents)

7. Fwu-Iuan Hshieh (1 out of 142 patents)

8. Ming-Tao Chung (1 out of 1 patent)

9. Li-Chang Yang (1 out of 4 patents)

Core Competencies:

Metal-Oxide Semiconductor

Trench MOSFET

Super-Junction Structures

Shielded Gate MOSFET

Power Semiconductor Devices

Integrated Circuits

ESD Protection Diodes

Fast Switching Devices

Schottky Rectifier

Avalanche Capability Improvement

High Switching Trench MOSFET

Hybrid IGBT Device

88 patents: Sort by Forward Citations

1. 12513965 - Trench-gate field effect transistor (2025-12-30),

2. 11450708 - Metal-oxide semiconductor module and light-emitting diode display device including the same (2022-09-20),

3. 11056488 - Metal-oxide-semiconductor device (2021-07-06),

4. 10700175 - Shielded gate MOSFET and fabricating method thereof (2020-06-30),

5. 9953969 - Semiconductor power device having shielded gate structure and ESD clamp diode manufactured with less mask process (2018-04-24),

6. 9530882 - Trench MOSFET with shielded gate and diffused drift region (2016-12-27),

7. 9530867 - Method for manufacturing a super-junction structures having implanted regions surrounding an N epitaxial layer in deep trench (2016-12-27),

8. 9412810 - Super-junction trench MOSFETs with closed cell layout having shielded gate (2016-08-09),

9. 9337328 - Super-junction trench MOSFETs with closed cell layout (2016-05-10),

10. 9293527 - Super-junction trench MOSFET structure (2016-03-22),

11. 9099320 - Super-junction structures having implanted regions surrounding an N epitaxial layer in deep trench (2015-08-04),

12. 9018701 - Avalanche capability improvement in power semiconductor devices using three masks process (2015-04-28),

13. 9000515 - Super-junction trench MOSFETs with short terminations (2015-04-07),

14. 8999789 - Super-junction trench MOSFETs with short terminations (2015-04-07),

15. 8907415 - High switching trench MOSFET (2014-12-09),

Force Mos Technology Co., Ltd. is a leading provider of power semiconductor solutions. With a focus on innovation and quality, the company offers a wide range of products including MOSFETs, IGBTs, and power modules for various applications such as automotive, industrial, and consumer electronics. Force Mos Technology is dedicated to providing reliable and efficient solutions to meet the needs of their customers worldwide.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

88 Patents

#78 in Taipei

#254 in Taiwan

#8,439 in the World

Force Mos Technology Co., Ltd.

Forward Citations = 403

9 inventors:

Fu-Yuan Hsieh (83 out of 103 patents)

Kao-Way Tu (4 out of 11 patents)

Yuan-Shun Chang (3 out of 9 patents)

4. Po-An Tsai (2 out of 2 patents)

5. Huan-Chung Weng (2 out of 2 patents)

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