For the Inventor, By the Inventor

Enter assignee name

New Taipei, Taiwan

Force Mos Technology Co., Ltd.

USPTO Granted Patents = 88

% Expired Patents = 20.5

Forward Citations = 416

Loading Chart...

Loading Chart...

9 inventors (with patents filed for the assignee):

Fu-Yuan Hsieh (83 out of 103 patents)

Kao-Way Tu (4 out of 11 patents)

Yuan-Shun Chang (3 out of 9 patents)

4. Po-An Tsai (2 out of 2 patents)

5. Huan-Chung Weng (2 out of 2 patents)

6. Yi-Sheng Lin (1 out of 46 patents)

7. Fwu-Iuan Hshieh (1 out of 142 patents)

8. Ming-Tao Chung (1 out of 1 patent)

9. Li-Chang Yang (1 out of 4 patents)

Core Competencies:

Trench MOSFET

Super-Junction

ESD Protection

Shielded Gate

Integrated Circuits

High Switching

Avalanche Capability

Power Semiconductor

LDMOS

Fast Switching

Trench Structures

Trenched Contacts

88 patents: Sort by Forward Citations

1. 12513965 - Trench-gate field effect transistor (2025-12-30),

2. 11450708 - Metal-oxide semiconductor module and light-emitting diode display device including the same (2022-09-20),

3. 11056488 - Metal-oxide-semiconductor device (2021-07-06),

4. 10700175 - Shielded gate MOSFET and fabricating method thereof (2020-06-30),

5. 9953969 - Semiconductor power device having shielded gate structure and ESD clamp diode manufactured with less mask process (2018-04-24),

6. 9530882 - Trench MOSFET with shielded gate and diffused drift region (2016-12-27),

7. 9530867 - Method for manufacturing a super-junction structures having implanted regions surrounding an N epitaxial layer in deep trench (2016-12-27),

8. 9412810 - Super-junction trench MOSFETs with closed cell layout having shielded gate (2016-08-09),

9. 9337328 - Super-junction trench MOSFETs with closed cell layout (2016-05-10),

10. 9293527 - Super-junction trench MOSFET structure (2016-03-22),

11. 9099320 - Super-junction structures having implanted regions surrounding an N epitaxial layer in deep trench (2015-08-04),

12. 9018701 - Avalanche capability improvement in power semiconductor devices using three masks process (2015-04-28),

13. 9000515 - Super-junction trench MOSFETs with short terminations (2015-04-07),

14. 8999789 - Super-junction trench MOSFETs with short terminations (2015-04-07),

15. 8907415 - High switching trench MOSFET (2014-12-09),

Company Overview

Force Mos Technology Co., Ltd., based in New Taipei, Taiwan, specializes in advanced trench MOSFET technology, focusing on the development and manufacturing of power semiconductors. The company is recognized for its innovations in super-junction designs, ESD protection, and shielded gate technologies, which enhance the performance of integrated circuits. With a commitment to high switching capabilities and avalanche resilience, Force Mos plays a significant role in the semiconductor industry, catering to various applications across multiple sectors.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 13 2026

88 Patents

#42 in New Taipei

#262 in Taiwan

#8,685 in the World

New Taipei, Taiwan

Force Mos Technology Co., Ltd.

Forward Citations = 416

9 inventors:

Fu-Yuan Hsieh (83 out of 103 patents)

Kao-Way Tu (4 out of 11 patents)

Yuan-Shun Chang (3 out of 9 patents)

4. Po-An Tsai (2 out of 2 patents)

5. Huan-Chung Weng (2 out of 2 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Force Mos Technology Co., Ltd.. Retrieved from https://idiyas.com/company/force-mos-technology-company

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

Loading…