The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Jul. 15, 2015
Force Mos Technology Co., Ltd., New Taipei, TW;
Fu-Yuan Hsieh, New Taipei, TW;
Abstract
A method for manufacturing a super junction trench MOSFET by growing a first epitaxial layer of a first conductivity type upon a heavily doped substrate layer of a first conductivity type; forming a deep trench mask covering a top surface of the first epitaxial layer; applying a trench mask to form a deep trench extending into the substrate layer by successively dry oxide etch and dry silicon etch; and carrying out angle ion implantations of the first conductivity type dopant and driving-in to form a first type column regions with column shape within the first epitaxial layer; and carrying out angle ion implantations of a second conductivity type dopant and diffusion to form a second type column regions with column shape adjacent to sidewalls of the deep trench, in parallel with and surrounding the first type column regions; and removing the hard mask.