The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Jul. 24, 2013
Applicant:
Force Mos Technology Co., Ltd., New Taipei, TW;
Inventor:
Fu-Yuan Hsieh, New Taipei, TW;
Assignee:
Force Mos Technology Co., Ltd., New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/66666 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/456 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7808 (2013.01); H01L 29/7813 (2013.01); H01L 29/0626 (2013.01); H01L 29/1095 (2013.01);
Abstract
A power semiconductor device with improved avalanche capability is disclosed by forming at least one avalanche capability enhancement doped region underneath an ohmic contact doped region. Moreover, a source mask is saved by using three masks process and the avalanche capability is further improved.