The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Sep. 19, 2013
Applicant:
Force Mos Technology Co., Ltd., New Taipei, TW;
Inventor:
Fu-Yuan Hsieh, New Taipei, TW;
Assignee:
FORCE MOS TECHNOLOGY CO., LTD., New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 21/26586 (2013.01); H01L 21/3065 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01);
Abstract
A super junction structure having implanted column regions surrounding an N epitaxial layer in a deep trench is disclosed to overcome charge imbalance problem and to further reduce Rds. The inventive super junction can be used for MOSFET and Schottky rectifier.