Huan-Chung Weng

Title: **Inventor Spotlight: Huan-Chung Weng**

Introduction

Huan-Chung Weng is an innovative inventor based in New Taipei, Taiwan. With a focus on semiconductor technology, he has made significant advancements in the field of electronic components, highlighted by his patented invention.

Latest Patents

Weng holds a patent for a groundbreaking invention titled "Shielded Gate MOSFET and Fabricating Method Thereof." This patent presents a detailed fabrication method for shielded gate MOSFETs, which involves several intricate steps. These steps include forming a semiconductor substrate with a trench, creating a sacrificial oxide layer to cover the trench's sidewalls, and integrating a source polycrystalline silicon region. Additionally, the process encapsulates the polycrystalline silicon region entirely with oxide layers and employs precise back etching methods to control the insulation layer's thickness. This innovation is poised to enhance the performance and efficiency of electronic devices.

Career Highlights

Huan-Chung Weng is affiliated with Force Mos Technology Co., Ltd., a company renowned for its advancements in semiconductor technologies. His contributions to the industry, particularly through his singular patent, exemplify his commitment to pushing the boundaries of current technology.

Collaborations

Throughout his career, Weng has collaborated with notable colleagues, including Kao-Way Tu and Po-An Tsai. These partnerships emphasize the importance of teamwork and shared expertise in driving technological advancements.

Conclusion

Huan-Chung Weng's dedication to innovation in semiconductor technology marks him as a key figure in his field. With his patent for the shielded gate MOSFET, he has reported substantial contributions that could influence future developments in electronics. As he continues his work at Force Mos Technology Co., Ltd., the industry looks forward to more passionate innovations from this talented inventor.