The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Jan. 08, 2015
Applicant:
Force Mos Technology Co., Ltd., New Taipei, TW;
Inventor:
Fu-Yuan Hsieh, New Taipei, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 29/49 (2006.01); H01L 29/417 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 23/535 (2013.01); H01L 29/0688 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/4916 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01);
Abstract
A super-junction trench MOSFET with closed cell layout having shielded gate is disclosed, wherein closed gate trenches surrounding a deep trench in each unit cell and the shielded gate disposed in the deep trench. Trenched source-body contacts are at least formed between the closed gate trenches and the deep trench. The deep trench has square, rectangular, circle or hexagon shape.