The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
May. 16, 2011
Applicant:
Fu-yuan Hsieh, New Taipei, TW;
Inventor:
Fu-Yuan Hsieh, New Taipei, TW;
Assignee:
Force Mos Technology Co., Ltd., New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/407 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01); H01L 29/0865 (2013.01); H01L 29/1095 (2013.01); H01L 29/41741 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/456 (2013.01);
Abstract
A shielded gate trench metal oxide semiconductor filed effect transistor (MOSFET) having high switching speed is disclosed. The inventive shielded gate trench MOSFET includes a shielded electrode spreading resistance placed between a shielded gate electrode and a source metal to enhance the performance of the shielded gate trench MOSFET by adjusting doping concentration of poly-silicon in gate trenches to a target value. Furthermore, high cell density is achieved by employing the inventive shielded gate trench MOSFET without requirement of additional cost.