Inventors with similar research interests:
Location History:
- Santa Clara, CA (US) (1994 - 1995)
- San Jose, CA (US) (1990 - 1999)
- Shanghai, CN (2010)
- Saratoga, CA (US) (1995 - 2013)
Company Filing History:
44 out of 96 
31 out of 255 
16 out of 17 
Years Active: 1990-2013
Title: Fwu-Iuan Hshieh: Innovating Semiconductor Power Devices
Introduction:
In the world of semiconductor power devices, few names stand out like Fwu-Iuan Hshieh. With a location in Saratoga, CA (US), Hshieh has made a significant impact on the industry through his numerous patents and groundbreaking inventions. This article delves into his latest patents, career highlights, collaborations, and his contributions to the field of semiconductor technology.
Latest Patents:
Hshieh's latest patents demonstrate his expertise in developing manufacturing methods and improving the performance of trench MOSFETs. One notable patent is his invention titled "Methods for manufacturing trench MOSFET with implanted drift region." This method involves implanting drift regions with higher doping concentration through the sidewalls of trenches to enhance performance and reduce Rds (drain-source resistance). By overcoming challenges related to degraded breakdown voltage caused by thick oxide in the lower portion of trench sidewalls and bottom, this patent showcases Hshieh's commitment to advancing semiconductor device fabrication techniques.
Another remarkable patent is the invention of "Trenched MOSFETs with improved gate-drain (GD) clamp diodes." This method enables the operation of semiconductor power devices in a forward conducting mode during voltage fly-back, absorbing transient energy with reduced stress. By incorporating a Zener diode between the gate metal and drain metal of the power device, the GD clamp diode acts as an effective clamping mechanism with an avalanche voltage lower than the source/drain avalanche voltage of the device. This development minimizes stress and improves the overall performance and reliability of the devices.
Career Highlights:
Throughout his career, Hshieh has made significant contributions to the semiconductor industry. He has worked with renowned companies such as General Semiconductor, Inc. and Siliconix Incorporated. With a cumulative total of 142 patents, Hshieh's expertise has helped shape the future of semiconductor power devices.
Collaborations:
Hshieh's expertise in the field of semiconductor power devices extends to successful collaborations with other industry professionals. Notably, he has worked alongside notable colleagues such as Koon Chong So and Yan Man Tsui, each contributing their unique insights and expertise. Collaborations like these have led to groundbreaking advancements in the field.
Conclusion:
Fwu-Iuan Hshieh's contributions to the semiconductor power device industry are undeniable. With a plethora of patents and a remarkable career, Hshieh has proven himself as a visionary innovator. His inventive methods for manufacturing trench MOSFETs and enhancing gate-drain clamp diodes have revolutionized the field, contributing to improved performance and reliability of semiconductor devices. As the industry continues to evolve, the pioneering spirit of innovators like Hshieh will undoubtedly shape the future of semiconductor power devices.
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