Mark I Gardner

Cedar Creek, TX, United States of America

Mark I Gardner

Average Co-Inventor Count = 2.5

ph-index = 39

Forward Citations = 8,183(Granted Patents)

Forward Citations (Not Self Cited) = 7,606(Sep 21, 2024)

DiyaCoin DiyaCoin 27.99 

Inventors with similar research interests:


Location History:

  • Red Rock, TX (US) (1994 - 1996)
  • Ceder Creek, TX (US) (1996 - 2000)
  • Cedar Park, TX (US) (2000 - 2001)
  • Cedar Creek, US (2001)
  • Bakersfield, CA (US) (2015)
  • Austin, TX (US) (1998 - 2022)
  • Cedar Creek, TX (US) (1995 - 2024)
  • Albany, NY (US) (2024)


Years Active: 1994-2025

where 'Filed Patents' based on already Granted Patents

609 patents (USPTO):

Title: Mark I Gardner: A Prolific Inventor with Over 550 Patents

Introduction:

Mark I Gardner, based in Cedar Creek, Texas, is a remarkable inventor known for his extensive contributions to the field of semiconductor technology. With more than 550 patents to his name, Gardner has been at the forefront of cutting-edge innovations and has made significant strides in improving transistor performance and 3D device layouts. In this article, we will delve into Gardner's latest patents, career highlights, collaborations, and his invaluable contributions to the world of technology.

Latest Patents:

Gardner's latest patents demonstrate his expertise in developing advanced semiconductor technologies. One notable invention is the "High Performance Floating Body VFET with Dielectric Core." This invention details a floating body vertical field-effect transistor (VFET) constructed with a dielectric core and introduces a manufacturing method for the same. The VFET incorporates sidewall structures, epitaxially grown channels, and salicide layers to enhance transistor performance and optimize metallization.

Another significant patent is the "3D Device Layout and Method Using Advanced 3D Isolation." This invention presents a comprehensive method for fabricating semiconductor structures with separated vertical channel structures. By employing a layer stack consisting of metal and dielectric layers, this technique enables the creation of lower and upper vertical channel structures, allowing for enhanced device performance in a compact footprint.

Career Highlights:

Gardner's illustrious career includes substantial contributions to renowned companies, most notably at Advanced Micro Devices Corporation (AMD) and Tokyo Electron Limited. At AMD, Gardner played a crucial role in developing innovative semiconductor designs and driving advancements in chip manufacturing technologies. His expertise has undoubtedly contributed to AMD's success in delivering high-performance processors and cutting-edge graphics solutions.

Collaborations:

Throughout his career, Gardner has had the opportunity to collaborate with esteemed colleagues, further amplifying his impact in the field. Notably, he has worked closely with H. Jim Fulford, Jr and Derick J. Wristers, two accomplished professionals in the semiconductor industry. Their collaborations have resulted in fruitful partnerships, fostering the exchange of ideas and propelling the development of groundbreaking technologies.

Conclusion:

Mark I Gardner's remarkable portfolio of over 550 patents underscores his extensive contributions to the field of semiconductor technology. His inventions, such as the High Performance Floating Body VFET and the 3D Device Layout with Advanced 3D Isolation, exemplify his commitment to advancing device performance and optimizing fabrication methods. Gardner's career highlights at companies like AMD and collaborations with esteemed colleagues further demonstrate his influential role in shaping the industry. It is through inventors like Gardner that technological progress continues to thrive, ultimately benefiting society as a whole.

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