The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Apr. 06, 2022
Tokyo Electron Limited, Tokyo, JP;
H. Jim Fulford, Marianna, FL (US);
Mark I. Gardner, Cedar Creek, TX (US);
Partha Mukhopadhyay, Oviedo, FL (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A semiconductor device includes a first transistor and a second transistor. The first transistor includes a first channel structure positioned over a substrate, first source/drain (S/D) regions positioned on ends of the first channel structure, and a first gate structure disposed all around the first channel structure. The second transistor includes a second channel structure positioned over the first channel structure, second S/D regions positioned on ends of the second channel structure, and a second gate structure disposed all around the second channel structure. The second channel structure has a smaller dimension than the first channel structure in a horizontal direction substantially parallel to a working surface of the substrate.