The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Jan. 30, 2024
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Anton J. Devilliers, Clifton Park, NY (US);

Daniel J. Fulford, Ballston Lake, NY (US);

Mark I. Gardner, Cedar Creek, TX (US);

H. Jim Fulford, Marianna, FL (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70466 (2013.01); G03F 7/70025 (2013.01); G03F 7/70141 (2013.01); G03F 7/70358 (2013.01);
Abstract

A method of processing a substrate, including forming a photomask based on a layout of a first surface of a wafer including at least one opaque region and at least one transparent region and the first surface of the wafer being coated with a photosensitive resist; providing the photomask at a first photomask location between the first surface of the wafer and a source of radiation at a predetermined wavelength, the at least one opaque region of the photomask covering a first region of the first surface of the wafer and the at least one transparent region of the photomask exposing a second region of the first surface of the wafer; and exposing the first surface of wafer to a first pattern of radiation, the first pattern of radiation including the second region of the wafer exposed by the at least one transparent region of the photomask.


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