The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Sep. 16, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Mark I. Gardner, Cedar Creek, TX (US);
H. Jim Fulford, Marianna, FL (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 30/67 (2025.01); H10D 62/13 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H10B 12/03 (2023.02); H10B 12/05 (2023.02); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/151 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01);
Abstract
A semiconductor device includes a stack of dynamic random access memory (DRAM) cell units over a substrate in a vertical direction perpendicular to a working surface of the substrate. Each DRAM cell unit includes a respective transistor, a respective capacitor and a respective bridge structure. Each bridge structure is configured to electrically couple the respective transistor to the respective capacitor. Each capacitor is elongated in a horizontal direction parallel to the working surface of the substrate.