The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Aug. 17, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Daniel J. Fulford, Cohoes, NY (US);

Anthony R. Schepis, Averill Park, NY (US);

Mark I. Gardner, Cedar Creek, TX (US);

H. Jim Fulford, Marianna, FL (US);

Anton J. Devilliers, Clifton Park, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); H01L 21/324 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70783 (2013.01); G03F 7/70483 (2013.01); H01L 21/3247 (2013.01); H01L 21/67103 (2013.01); H01L 21/67115 (2013.01); H01L 21/67288 (2013.01); H01L 22/20 (2013.01);
Abstract

Aspects of the present disclosure provide a method for optimizing wafer shape. For example, the method can include receiving a wafer having a working surface for one or more devices to be fabricated thereon and a backside surface opposite to the working surface, measuring the wafer to identify bow measurement of the wafer, and forming a stress-modification film on the backside surface of the wafer. The stress-modification film can be reactive to heat such that applied heat modifies an internal stress of the stress-modification film. The method can also include applying a pattern of heat onto the stress-modification film to modify the internal stress of the stress-modification film, the pattern of heat corresponding to the bow measurement.


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