The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

May. 20, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

H. Jim Fulford, Albany, NY (US);

Mark I. Gardner, Albany, NY (US);

Partha Mukhopadhyay, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 48/36 (2025.01); H10D 84/85 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6728 (2025.01); H10D 48/362 (2025.01); H10D 84/85 (2025.01); H10D 99/00 (2025.01);
Abstract

A semiconductor device may include a transistor structure. The transistor structure may include a metal structure extending along a vertical direction; a gate dielectric layer around the metal structure; a channel layer around the gate dielectric layer; a first metal electrode disposed below the metal structure and in electrical contact with a first end of the channel layer; a second metal electrode disposed above the metal structure and in electrical contact with a second end of the channel layer; and a third metal electrode disposed above and in electrical contact with the metal structure.


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