The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Jul. 15, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Mark I. Gardner, Albany, NY (US);
H. Jim Fulford, Albany, NY (US);
Partha Mukhopadhyay, Albany, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); H10B 12/00 (2023.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10B 12/00 (2023.02); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6755 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01);
Abstract
Semiconductor devices and corresponding methods of manufacturing the same are disclosed. For example, a semiconductor device includes a first transistor comprising a first channel region. The first channel region includes one or more first nanostructures formed of a semiconductor material. The semiconductor device includes a second transistor disposed vertically with respect to the first transistor and comprising a second channel region. The second channel region includes one or more second nanostructures formed of a conductive oxide material.