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Forward Citations = 89

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5 inventors (with patents filed for the assignee):

Fwu-Iuan Hshieh (13 out of 142 patents)

Fu-Yuan Hsieh (1 out of 103 patents)

Fwu-ruan Hshieh (1 out of 1 patent)

4. Fwa-Iuan Hshieh (1 out of 1 patent)

5. Fwu-Juan Hshieh (1 out of 2 patents)

17 patents: Sort by Forward Citations

1. 8461001 - Methods for manufacturing trench MOSFET with implanted drift region (2013-06-11),

2. 8389354 - Trenched MOSFETS with improved gate-drain (GD) clamp diodes (2013-03-05),

3. 8378411 - Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation (2013-02-19),

4. 8252645 - Method of manufacturing trenched MOSFETs with embedded Schottky in the same cell (2012-08-28),

5. 8159021 - Trench MOSFET with double epitaxial structure (2012-04-17),

6. 8058670 - Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up (2011-11-15),

7. 8022471 - Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures (2011-09-20),

8. 7960787 - Configuration of trenched semiconductor power device to reduce masked process (2011-06-14),

9. 7929321 - Depletion mode trench MOSFET for improved efficiency of DC/DC converter applications (2011-04-19),

10. 7863685 - Trench MOSFET with embedded junction barrier Schottky diode (2011-01-04),

11. 7812409 - Trench MOSFET with cell layout, ruggedness, truncated corners (2010-10-12),

12. 7800185 - Closed trench MOSFET with floating trench rings as termination (2010-09-21),

13. 7750398 - Trench MOSFET with trench termination and manufacture thereof (2010-07-06),

14. 7646058 - Device configuration and method to manufacture trench MOSFET with solderable front metal (2010-01-12),

15. 7633121 - Trench MOSFET with implanted drift region (2009-12-15),

Force-MOS Technology Corporation is a leading semiconductor company specialized in the design, development, and manufacturing of power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). With over 20 years of industry experience, we provide innovative and reliable MOSFET solutions for a wide range of applications including automotive, industrial, consumer electronics, and telecommunications. Our advanced technology, rigorous quality control, and commitment to customer satisfaction have made us a trusted partner for major corporations worldwide.

This text is generated by artificial intelligence and may not be accurate.

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USPTO Data Jan 1 1976 - Dec 30 2025

17 Patents

#107 in Hsinchu

#908 in Taiwan

#34,849 in the World

Hsinchu, Taiwan

Force-mos Technology Corporation