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Hsinchu, Taiwan

Force-Mos Technology Corporation

USPTO Granted Patents = 18

% Expired Patents = 5.6

Forward Citations = 91

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9 inventors (with patents filed for the assignee):

Fwu-Iuan Hshieh (13 out of 142 patents)

Fu-Yuan Hsieh (1 out of 103 patents)

Fwu-ruan Hshieh (1 out of 1 patent)

4. Fwa-Iuan Hshieh (1 out of 1 patent)

5. Fwu-Juan Hshieh (1 out of 2 patents)

6. Ping-chia Chung (1 out of 1 patent)

7. Yu-Chan Tsai (1 out of 1 patent)

8. Yuan-Shun Chang (1 out of 1 patent)

9. Kao-Way Tu (1 out of 1 patent)

18 patents: Sort by Forward Citations

1. 12757800 - Method of making a multi-chip package device (2026-10-06),

2. 8461001 - Methods for manufacturing trench MOSFET with implanted drift region (2013-06-11),

3. 8389354 - Trenched MOSFETS with improved gate-drain (GD) clamp diodes (2013-03-05),

4. 8378411 - Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation (2013-02-19),

5. 8252645 - Method of manufacturing trenched MOSFETs with embedded Schottky in the same cell (2012-08-28),

6. 8159021 - Trench MOSFET with double epitaxial structure (2012-04-17),

7. 8058670 - Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up (2011-11-15),

8. 8022471 - Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures (2011-09-20),

9. 7960787 - Configuration of trenched semiconductor power device to reduce masked process (2011-06-14),

10. 7929321 - Depletion mode trench MOSFET for improved efficiency of DC/DC converter applications (2011-04-19),

11. 7863685 - Trench MOSFET with embedded junction barrier Schottky diode (2011-01-04),

12. 7812409 - Trench MOSFET with cell layout, ruggedness, truncated corners (2010-10-12),

13. 7800185 - Closed trench MOSFET with floating trench rings as termination (2010-09-21),

14. 7750398 - Trench MOSFET with trench termination and manufacture thereof (2010-07-06),

15. 7646058 - Device configuration and method to manufacture trench MOSFET with solderable front metal (2010-01-12),

Company Overview

Force-Mos Technology Corporation, based in Hsinchu, Taiwan, specializes in advanced semiconductor technologies and solutions. The company focuses on the development and manufacturing of innovative materials and processes that enhance the performance and efficiency of electronic devices. With a strong emphasis on research and development, Force-Mos is dedicated to pushing the boundaries of technology in the semiconductor industry, contributing to various applications across consumer electronics, automotive, and industrial sectors.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

18 Patents

#177 in Hsinchu

#896 in Taiwan

#34,187 in the World

Hsinchu, Taiwan

Force-Mos Technology Corporation

Forward Citations = 91

9 inventors:

Fwu-Iuan Hshieh (13 out of 142 patents)

Fu-Yuan Hsieh (1 out of 103 patents)

Fwu-ruan Hshieh (1 out of 1 patent)

4. Fwa-Iuan Hshieh (1 out of 1 patent)

5. Fwu-Juan Hshieh (1 out of 2 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Force-Mos Technology Corporation. Retrieved from https://idiyas.com/company/force-mos-technology

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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