The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2010

Filed:

Jun. 05, 2007
Applicant:

Fwu-iuan Hshieh, Saratoga, CA (US);

Inventor:

Fwu-Iuan Hshieh, Saratoga, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/732 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract

A vertical semiconductor power device includes a plurality of semiconductor power cells connected to a bottom electric terminal disposed on a bottom surface of a semiconductor substrate and at least a top electrical terminal disposed on a top surface of the substrate and connected to the semiconductor power cells. The top electrical terminal further includes a solderable front metal for soldering to a conductor for providing an electric connection therefrom. In an exemplary embodiment, the conductor soldering to the solderable front metal includes a conductor of a high-heat-conductivity metal plate. In another exemplary embodiment, the conductor soldering to the solderable front metal includes a copper plate. In another exemplary embodiment, the solderable front metal includes a Ti/Ni/Au front metal. In another exemplary embodiment, the solderable front metal includes a Ti/Ni/Ag front metal.


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Hshieh, Fwu-Iuan. (2010). Device configuration and method to manufacture trench mosfet with solderable front metal (U.S. Patent No. 7646058). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7646058

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