The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Mar. 24, 2011
Applicant:
Fu-yuan Hsieh, Kaohsiung, TW;
Inventor:
Fu-Yuan Hsieh, Kaohsiung, TW;
Assignee:
Force Mos Technology., Ltd., , TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 31/062 (2012.01);
U.S. Cl.
CPC ...
Abstract
A structure of power semiconductor device integrated with clamp diodes having separated gate metal pads is disclosed. The separated gate metal pads are wire bonded together on the gate lead frame. This improved structure can prevent the degradation of breakdown voltage due to electric field in termination region blocked by polysilicon or gate metal.
Quick Actions:
Hsieh, Fu-Yuan. (2013). Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation (U.S. Patent No. 8378411). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8378411
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