Company Filing History:
Years Active: 1998-2009
Title: Innovations of Fwu-Juan Hshieh in Semiconductor Technology
Introduction
Fwu-Juan Hshieh is a notable inventor based in Saratoga, California, recognized for his contributions to semiconductor technology. With two patents to his name, Hshieh has made significant advancements in the design and fabrication of power MOSFET devices, contributing to the ongoing evolution in electronics.
Latest Patents
Fwu-Juan Hshieh's latest patents encompass innovative devices designed to enhance the efficiency and cost-effectiveness of semiconductor power components. His first patent describes a "Trenched MOSFET Device Configuration with Reduced Mask Processes." This invention includes a semiconductor power device featuring a termination area equipped with a trenched gate runner that connects electrically to a trenched gate. Notably, the design incorporates a trenched field plate positioned within a trench that is opened in the termination area, promoting improved electrical connections. This configuration reduces the complexity of the fabrication process and minimizes the required die size.
Hshieh's second patent focuses on "DMOS Transistors Having Trenched Gate Oxide." This patent introduces an improved power MOSFET structure and a corresponding fabrication process aimed at reducing costs through simplified device structures. The innovation allows for the insulation of mobile ions by extending the poly gate and metal contacts, eliminating the need for a passivation layer. This approach leads to a further reduction in manufacturing costs by diminishing die size and complexity.
Career Highlights
Fwu-Juan Hshieh has gained valuable experience working with prominent companies in the semiconductor industry. He has been associated with Magemos Corporation and Force-MOS Technology Corporation, respectively. His tenure at these organizations has allowed him to develop critical insights into the workings of power devices, driving him to innovate within the field.
Collaborations
Throughout his career, Hshieh has collaborated with notable colleagues such as True-Lon Lin and Danny Chi Nim. Together, they have contributed to advancements in semiconductor technology, sharing insights and expertise that have pushed the boundaries of their field.
Conclusion
Fwu-Juan Hshieh stands as a prominent figure in semiconductor innovation, with his patents reflecting a commitment to enhancing device efficiency and reducing manufacturing costs. His work continues to influence the evolution of MOSFET technology, paving the way for future advancements in the electronics sector. As the demand for efficient power devices grows, Hshieh's contributions remain invaluable to the industry.