The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Dec. 04, 2006
Fwu-iuan Hshieh, Saratoga, CA (US);
Fwu-Iuan Hshieh, Saratoga, CA (US);
Force-MOS Technology Corp., , KY;
Abstract
A trenched semiconductor power device that includes a trenched gate disposed in an extended continuous trench surrounding a plurality of transistor cells wherein the layout of the trenched gate surrounding the transistor cells as closed cells having truncated corners or rounded corners. In an exemplary embodiment, the closed cells further includes a contact metal to contact a source and a body regions wherein the contact metal the trenched gate surrounding the transistor cell have a uniform space between them. In another exemplary embodiment, the semiconductor power device further includes a contact dopant region disposed below the contact metal to enhance an electrical contact between the metal contact and the source region and the body region, and the contact dopant region having substantially circular shape to achieve a uniform space between the contact dopant region and the trenched gate surrounding the closed cells.