For the Inventor, By the Inventor

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Melville, NY, United States of America

General Semiconductor, Inc.

USPTO Granted Patents = 96

EPO Patents = 17

Trademarks = 2

Forward Citations = 1,651

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44 inventors (with patents filed for the assignee):

Fwu-Iuan Hshieh (44 out of 142 patents)

Koon Chong So (42 out of 67 patents)

Richard A Blanchard (38 out of 271 patents)

4. Yan Man Tsui (19 out of 29 patents)

5. John Amato (12 out of 17 patents)

6. Gary Horsman (5 out of 5 patents)

7. Willem G Einthoven (5 out of 23 patents)

8. Finbarr O'Donoghue (4 out of 4 patents)

9. Jack Eng (4 out of 6 patents)

10. Jean-Michel Guillot (3 out of 8 patents)

11. Paddy O'Shea (3 out of 3 patents)

12. Eamonn Medley (3 out of 3 patents)

13. Lawrence LaTerza (3 out of 6 patents)

14. Marie Guillot (3 out of 4 patents)

15. Eugene Chen (2 out of 13 patents)

Core Competencies:

High Voltage Power MOSFET

Trench DMOS Transistor

Surface Mount Multichip Devices

Programmable Threshold Voltage

Trench Schottky Rectifier

Low On-Resistance

Voltage Sustaining Region

Electro-Static Discharge Protection

Trench MOSFET Device

Double Diffused Field Effect Transistor

Narrow Trenches

High Speed Trench DMOS

96 patents: Sort by Forward Citations

1. 8513732 - High voltage power MOSFET having low on-resistance (2013-08-20),

2. 7745885 - High voltage power MOSFET having low on-resistance (2010-06-29),

3. 7586148 - Power semiconductor device having a voltage sustaining region that includes doped columns formed by terraced trenches (2009-09-08),

4. 7525183 - Surface mount multichip devices (2009-04-28),

5. 7242078 - Surface mount multichip devices (2007-07-10),

6. 7224027 - High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon (2007-05-29),

7. 7199427 - DMOS device with a programmable threshold voltage (2007-04-03),

8. 7094640 - Method of making a trench MOSFET device with improved on-resistance (2006-08-22),

9. 7091552 - High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation (2006-08-15),

10. 7084455 - Power semiconductor device having a voltage sustaining region that includes terraced trench with continuous doped columns formed in an epitaxial layer (2006-08-01),

11. 7067376 - High voltage power MOSFET having low on-resistance (2006-06-27),

12. 7049194 - Trench DMOS device with improved drain contact (2006-05-23),

13. 7019360 - High voltage power mosfet having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source (2006-03-28),

14. 7015125 - Trench MOSFET device with polycrystalline silicon source contact structure (2006-03-21),

15. 6992350 - High voltage power MOSFET having low on-resistance (2006-01-31),

General Semiconductor, Inc. is a leading manufacturer of semiconductor devices for a wide range of electronic applications. With over 50 years of experience, we specialize in the design, development, and production of diodes, rectifiers, transient voltage suppressors, and other essential components. Our high-quality products are used in automotive systems, industrial equipment, consumer electronics, telecommunications, and many other industries. At General Semiconductor, we are committed to delivering innovative solutions, superior quality, and excellent customer service.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 9 2025

96 Patents

#8 in Melville, NY

#216 in New York

#3,781 in US

#7,812 in the World

Melville, NY, United States of America

General Semiconductor, Inc.

Forward Citations = 1,651

44 inventors:

Fwu-Iuan Hshieh (44 out of 142 patents)

Koon Chong So (42 out of 67 patents)

Richard A Blanchard (38 out of 271 patents)

4. Yan Man Tsui (19 out of 29 patents)

5. John Amato (12 out of 17 patents)

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