For the Inventor, By the Inventor

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Melville, NY, United States of America

General Semiconductor, Inc.

USPTO Granted Patents = 96

% Expired Patents = 30.2

EPO Patents = 17

Trademarks = 1

Forward Citations = 1,663

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39 inventors (with patents filed for the assignee):

Fwu-Iuan Hshieh (44 out of 142 patents)

Koon Chong So (42 out of 67 patents)

Richard A Blanchard (38 out of 271 patents)

4. Yan Man Tsui (19 out of 29 patents)

5. John Amato (12 out of 17 patents)

6. Gary Horsman (5 out of 5 patents)

7. Willem G Einthoven (5 out of 23 patents)

8. Finbarr O'Donoghue (4 out of 4 patents)

9. Jack Eng (4 out of 6 patents)

10. Jean-Michel Guillot (3 out of 8 patents)

11. Paddy O'Shea (3 out of 3 patents)

12. Eamonn Medley (3 out of 3 patents)

13. Lawrence LaTerza (3 out of 6 patents)

14. Marie Guillot (3 out of 4 patents)

15. Eugene Chen (2 out of 15 patents)

Core Competencies:

Power MOSFET

Trench Structure

Low On-Resistance

Voltage Sustaining Region

DMOS Device

Surface Mount Devices

Transient-Voltage Suppression

High Voltage

Programmable Threshold

Schottky Rectifier

Integrated Circuit

Gate Oxide Integrity

96 patents: Sort by Forward Citations

1. 8513732 - High voltage power MOSFET having low on-resistance (2013-08-20),

2. 7745885 - High voltage power MOSFET having low on-resistance (2010-06-29),

3. 7586148 - Power semiconductor device having a voltage sustaining region that includes doped columns formed by terraced trenches (2009-09-08),

4. 7525183 - Surface mount multichip devices (2009-04-28),

5. 7242078 - Surface mount multichip devices (2007-07-10),

6. 7224027 - High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon (2007-05-29),

7. 7199427 - DMOS device with a programmable threshold voltage (2007-04-03),

8. 7094640 - Method of making a trench MOSFET device with improved on-resistance (2006-08-22),

9. 7091552 - High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation (2006-08-15),

10. 7084455 - Power semiconductor device having a voltage sustaining region that includes terraced trench with continuous doped columns formed in an epitaxial layer (2006-08-01),

11. 7067376 - High voltage power MOSFET having low on-resistance (2006-06-27),

12. 7049194 - Trench DMOS device with improved drain contact (2006-05-23),

13. 7019360 - High voltage power mosfet having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source (2006-03-28),

14. 7015125 - Trench MOSFET device with polycrystalline silicon source contact structure (2006-03-21),

15. 6992350 - High voltage power MOSFET having low on-resistance (2006-01-31),

General Semiconductor, Inc., based in Melville, NY, specializes in the development and manufacturing of advanced power MOSFET technology. The company focuses on key innovations such as trench structure designs, low on-resistance characteristics, and high voltage capabilities. Its product offerings include DMOS devices and surface mount devices, catering to a variety of applications that require efficient transient-voltage suppression. General Semiconductor is committed to providing reliable solutions for the evolving needs of the semiconductor industry.

Profile summary based on public USPTO records.

Company Badge

USPTO Data Jan 1 1976 - Sep 29 2026

96 Patents

#10 in Melville, NY

#241 in New York

#3,912 in US

#8,040 in the World

Melville, NY, United States of America

General Semiconductor, Inc.

Forward Citations = 1,663

39 inventors:

Fwu-Iuan Hshieh (44 out of 142 patents)

Koon Chong So (42 out of 67 patents)

Richard A Blanchard (38 out of 271 patents)

4. Yan Man Tsui (19 out of 29 patents)

5. John Amato (12 out of 17 patents)

Please report any incorrect information to [email protected]

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