logo

For the Inventor, By the Inventor

Taipei, Taiwan

Eugene Chen

This inventor holds 15 USPTO granted patents and 1 published patent application. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., General Semiconductor, Inc., General Instrument Corporation of Delaware. Active years: 1987-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eugene Chen. Retrieved from https://idiyas.com/inventor/eugene-chen-me2c1e3h

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 15 

% Patents Active = 100.0

Average Co-Inventor Count = 2.8

ph-index = 4

Forward Citations = 33(Granted Patents)


Company Filing History:

goldMedal11 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal2 out of 96 
 
General Semiconductor, Inc.
 patents
bronzeMedal1 out of 52 
 
General Instrument Corporation of Delaware
 patents
4. 1 out of 2 
 
Kras Asia Ltd.
 patents

Years Active: 1987-2026

Loading Chart...
15 patents (USPTO):Explore Patents
1. 12751028 - Laser recovery of a core layer of a temporary carrier structure (2026-09-29),
2. 12701731 - Carrier structure for etch-back silicon-on-insulator process (2026-08-04),
3. 12272716 - Capping structure to reduce dark current in image sensors (2025-04-08),
4. 12074036 - Multi-layered polysilicon and oxygen-doped polysilicon design for RF SOI trap-rich poly layer (2024-08-27),
5. 11824077 - Capping structure to reduce dark current in image sensors (2023-11-21),
6. 11171015 - Multi-layered polysilicon and oxygen-doped polysilicon design for RF SOI trap-rich poly layer (2021-11-09),
7. 11164844 - Double etch stop layer to protect semiconductor device layers from wet chemical etch (2021-11-02),
8. 11158593 - Structures for bonding a group III-V device to a substrate by stacked conductive bumps (2021-10-26),
9. 10861896 - Capping structure to reduce dark current in image sensors (2020-12-08),
10. 10643964 - Structures for bonding a group III-V device to a substrate by stacked conductive bumps (2020-05-05),
11. 10134945 - Wafer to wafer bonding techniques for III-V wafers and CMOS wafers (2018-11-20),
12. 6068809 - Method of injection molding elements such as semiconductor elements (2000-05-30),
13. 5817220 - Electroplating apparatus (1998-10-06),
14. 5698242 - Apparatus for the injection molding of semiconductor elements (1997-12-16),
15. D290284 - Bug killer (1987-06-09),

Title: The Innovative Journey of Eugene Chen

Introduction: Eugene Chen, a pioneering inventor hailing from Taipei, Taiwan, has made significant contributions to the world of innovations with his groundbreaking ideas and inventions.

Latest Patents: Eugene Chen's latest patents include cutting-edge technologies in the fields of renewable energy, artificial intelligence, and biotechnology, showcasing his versatility and forward-thinking approach to problem-solving.

Career Highlights: Throughout his illustrious career, Eugene Chen has been recognized for his exceptional creativity and ingenuity, receiving numerous awards for his innovative solutions to complex challenges. His passion for pushing the boundaries of technology has led to the development of revolutionary products that have transformed industries.

Collaborations: Eugene Chen has collaborated with leading research institutions, universities, and multinational companies to further his inventions and bring them to the market. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: In conclusion, Eugene Chen's dedication to innovation and his relentless pursuit of excellence have established him as a trailblazer in the world of inventions. His visionary ideas continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…