The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Jul. 21, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some embodiments, a method for forming a semiconductor device is provided. The method includes etching a substrate to form a recess within a surface of the substrate. An epitaxial material is formed within the recess, a capping structure is formed on the epitaxial material, and a capping layer is formed onto the capping structure. The capping layer laterally extends past an outermost sidewall of the capping structure. Dopants are implanted into the epitaxial material. Implanting the dopants into the epitaxial material forms a first doped region having a first doping type and a second doped region having a second doping type.