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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11171015 B1

PDFFull Text
Date of Patent:
Nov. 09, 2021

Filed:

Sep. 11, 2019

Multi-layered polysilicon and oxygen-doped polysilicon design for rf soi trap-rich poly layer

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Yu-Hung Cheng, Tainan, TW;

Cheng-Ta Wu, Shueishang Township, TW;

Chen-Hao Chiang, Jhongli, TW;

Alexander Kalnitsky, San Francisco, CA (US);

Yeur-Luen Tu, Taichung, TW;

Eugene Chen, Taipei, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Eschweiler & Potashnik, LLC

Primary Examiner:

Sheng-Bai Zhu

Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 23/66 (2006.01); H01L 21/762 (2006.01); H01L 29/34 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3226 (2013.01); H01L 21/7624 (2013.01); H01L 23/66 (2013.01); H01L 29/0649 (2013.01); H01L 29/34 (2013.01);
Abstract

In some embodiments, the present disclosure relates to a high-resistivity silicon-on-insulator (SOI) substrate, including a first polysilicon layer arranged over a semiconductor substrate. A second polysilicon layer is arranged over the first polysilicon layer, and a third polysilicon layer is arranged over the second polysilicon layer. An active semiconductor layer over an insulator layer may be arranged over the third polysilicon layer. The second polysilicon layer has an elevated concentration of oxygen compared to the first and third polysilicon layers.

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Cheng, Yu-Hung. (2021). Multi-layered polysilicon and oxygen-doped polysilicon design for rf soi trap-rich poly layer (U.S. Patent No. 11171015). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11171015

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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