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Chen-Hao Chiang

This inventor holds 35 USPTO granted patents and 7 published patent applications, primarily in Semiconductor Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2026.

USPTO Granted Patents = 35 (Patent Applications = 7)

% Patents Active = 91.4

Average Co-Inventor Count = 4.7

ph-index = 4

Forward Citations = 66(Granted Patents)

Location History:

Taoyuan County, TW (2021)
Jhongli, TW (2014 - 2024)

Company Filing History:

35 out of 42,679

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2014-2026

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Areas of Expertise:

High Electron Mobility Transistor

Photodetector

Thin Film Transfer

Diffusion Barrier

Group III-Nitride

Dopant Implantation

Multi-Layered Polysilicon

Oxygen-Doped Polysilicon

RF SOI

Indium Nitride Layer

Semiconductor Device

Etch Stop Layer

35 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12696573 - Structure and formation method of semiconductor device with photodetector (2026-07-28),

2. 12439709 - Image sensor with diffusion barrier structure (2025-10-07),

3. 12369352 - Thin film transfer using substrate with etch stop layer and diffusion barrier layer (2025-07-22),

4. 12328965 - In-situ cap for germanium photodetector (2025-06-10),

5. 12327723 - Passive cap for germanium-containing layer (2025-06-10),

6. 12136679 - Semiconductor device comprising a photodetector with reduced dark current (2024-11-05),

7. 12074036 - Multi-layered polysilicon and oxygen-doped polysilicon design for RF SOI trap-rich poly layer (2024-08-27),

8. 11984486 - Method of implanting dopants into a group III-nitride structure and device formed (2024-05-14),

9. 11949030 - In-situ cap for germanium photodetector (2024-04-02),

10. 11804531 - Thin film transfer using substrate with etch stop layer and diffusion barrier layer (2023-10-31),

11. 11749762 - Semiconductor device comprising a photodetector with reduced dark current (2023-09-05),

12. 11594606 - Method of implanting dopants into a group III-nitride structure and device formed (2023-02-28),

13. 11551927 - High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same (2023-01-10),

14. 11171015 - Multi-layered polysilicon and oxygen-doped polysilicon design for RF SOI trap-rich poly layer (2021-11-09),

15. 10991819 - High electron mobility transistors (2021-04-27),

Title: Chen-Hao Chiang: Innovator from Jhongli, Taiwan

Introduction: Chen-Hao Chiang is a renowned inventor hailing from Jhongli, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Chen-Hao Chiang holds several patents in the areas of electronics, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for a better future.

Career Highlights: With a career spanning over two decades, Chen-Hao Chiang has worked with leading tech companies, research institutions, and universities, where he has spearheaded numerous projects that have pushed the boundaries of innovation.

Collaborations: Throughout his career, Chen-Hao Chiang has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of creativity and excellence in all his endeavors.

Conclusion: Chen-Hao Chiang's passion for innovation, coupled with his relentless drive to make a positive impact on society, solidifies his position as a trailblazer in the world of technology and invention.

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