The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Apr. 28, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chen-Hao Chiang, Taoyuan City, TW;
Li-Weng Chang, New Taipei City, TW;
Jiun-Yi Wu, Taoyuan City, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure and a formation method are provided. The method includes forming a p-type doped region and an n-type doped region in a semiconductor substrate. The method also includes partially removing the semiconductor substrate to form a recess exposing portions of the p-type doped region and the n-type doped region. The method further includes epitaxially growing a buffer layer along sidewalls and a bottom of the recess. In addition, the method includes epitaxially growing a photo-sensing structure over the buffer layer. The photo-sensing structure contains germanium and tin.