The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

Mar. 01, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Lung Yuan Pan, Hsinchu, TW;

Chen-Hao Chiang, Jhongli, TW;

Chih-Ming Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/762 (2006.01); H10F 30/223 (2025.01); H10F 71/00 (2025.01); H10F 77/14 (2025.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); H01L 21/0262 (2013.01); H01L 21/76251 (2013.01); H10F 30/223 (2025.01); H10F 71/1212 (2025.01); H10F 77/147 (2025.01);
Abstract

In some embodiments, the present disclosure relates to a semiconductor device, including a substrate including a first semiconductor material and a semiconductor layer extending into an upper surface of the substrate and including a second semiconductor material with a different band gap than the first semiconductor material. The semiconductor device also includes a passive cap including a first dielectric material and disposed along the upper surface of the substrate and on opposite sides of the semiconductor layer, and a photodetector in the semiconductor layer. The first dielectric material includes silicon nitride.


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