The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2023
Filed:
Nov. 04, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Po-Chun Liu, Hsinchu, TW;
Chung-Chieh Hsu, Hsinchu, TW;
Chi-Ming Chen, Zhubei, TW;
Chung-Yi Yu, Hsinchu, TW;
Chen-Hao Chiang, Jhongli, TW;
Min-Chang Ching, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A high electron mobility transistor includes: a first semiconductor layer over a substrate, and a second semiconductor layer over the first semiconductor layer, the second semiconductor layer having a band gap discontinuity with the first semiconductor layer, and at the first semiconductor layer and/or the second conductive layer includes indium. A top layer is over the second semiconductor layer, and a metal layer is over, and extends into, the top layer, the top layer separating the metal layer from the second semiconductor layer. A gate electrode is over the top layer, a third semiconductor layer being between the gate electrode and the top layer, where a sidewall of the third semiconductor layer and a sidewall of the metal layer are separated. A source and drain are on opposite sides of the gate electrode, the top layer extending continuously from below the source, below the gate electrode, and below the drain.