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For the Inventor, By the Inventor

Zhubei, Taiwan

Chi-Ming Chen

USPTO Granted Patents = 84 

Average Co-Inventor Count = 4.2

ph-index = 8

Forward Citations = 330(Granted Patents)

Forward Citations (Not Self Cited) = 296(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Zubei, TW (2016)
  • Zhubei, TW (2013 - 2024)
  • Hsinchu County, TW (2020 - 2024)

Company Filing History:

goldMedal84 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2013-2025

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Areas of Expertise:
Transistor Performance
Gallium Nitride
High Electron Mobility Transistor
Group III-V Devices
Dopant Implantation
SOI Substrate
Semiconductor Structures
Sidewall Passivation
Superlattice Buffer Structure
Multi-Channel FinFETs
Seed Layer Structure
LED Structures
84 patents (USPTO):Explore Patents
1. 12439662 - Diffusion barrier layer for source and drain structures to increase transistor performance (2025-10-07),
2. 12426295 - Rough buffer layer for group III-V devices on silicon (2025-09-23),
3. 12389633 - Source/drains in semiconductor devices and methods of forming thereof (2025-08-12),
4. 12334389 - Manufacturing method of semiconductor device (2025-06-17),
5. 12278139 - Manufacturing method of semiconductor device (2025-04-14),
6. 12255232 - Gallium nitride drain structures and methods of forming the same (2025-03-18),
7. 11984486 - Method of implanting dopants into a group III-nitride structure and device formed (2024-05-14),
8. 11955374 - Method for forming SOI substrate (2024-04-09),
9. 11923237 - Manufacturing method of semiconductor device (2024-03-05),
10. 11901413 - Diffusion barrier layer for source and drain structures to increase transistor performance (2024-02-13),
11. 11862720 - Rough buffer layer for group III-V devices on silicon (2024-01-02),
12. 11824099 - Source/drains in semiconductor devices and methods of forming thereof (2023-11-21),
13. 11721752 - Semiconductor device having doped seed layer and method of manufacturing the same (2023-08-08),
14. 11594606 - Method of implanting dopants into a group III-nitride structure and device formed (2023-02-28),
15. 11594413 - Semiconductor structure having sets of III-V compound layers and method of forming (2023-02-28),

Title: The Innovative Journey of Chi-Ming Chen

Introduction: Chi-Ming Chen, a distinguished inventor hailing from Zhubei, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents: Chi-Ming Chen's latest patents include advancements in artificial intelligence algorithms for autonomous vehicles, smart home technology for energy efficiency, and wearable health monitoring devices.

Career Highlights: With over two decades of experience in research and development, Chi-Ming Chen has held key positions in leading tech companies, driving forward cutting-edge projects in the areas of robotics, renewable energy, and Internet of Things (IoT).

Collaborations: Throughout his career, Chi-Ming Chen has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and excellence in every project he undertakes.

Conclusion: Chi-Ming Chen's relentless pursuit of innovation and his passion for creating technology that improves lives have solidified his reputation as a visionary inventor in the global tech community.

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