The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Jul. 21, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/088 (2006.01); H01L 27/12 (2006.01); H01L 29/167 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/417 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); B82Y 10/00 (2011.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01); H01L 29/165 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/84 (2013.01); H01L 27/0886 (2013.01); H01L 27/1203 (2013.01); H01L 29/167 (2013.01); H01L 29/66568 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02639 (2013.01); H01L 29/41783 (2013.01);
Abstract
Various embodiments of the present disclosure are directed towards a semiconductor device including a gate electrode over a semiconductor substrate. An epitaxial source/drain layer is disposed on the semiconductor substrate and is laterally adjacent to the gate electrode. The epitaxial source/drain layer comprises a first dopant. A diffusion barrier layer is between the epitaxial source/drain layer and the semiconductor substrate. The diffusion barrier layer comprises a barrier dopant that is different from the first dopant.