The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Jan. 25, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chi-Ming Chen, Hsinchu County, TW;
Kuei-Ming Chen, New Taipei, TW;
Po-Chun Liu, Hsinchu, TW;
Chung-Yi Yu, Hsin-Chu, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A manufacturing method of a semiconductor device includes at least the following steps. A sacrificial substrate is provided. An etch stop layer is formed on the sacrificial substrate. A portion of the etch stop layer is oxidized to form an oxide layer between the sacrificial substrate and the remaining etch stop layer. A capping layer is formed on the remaining etch stop layer. A device layer is formed on the capping layer. A first etching process is performed to remove the sacrificial substrate. A second etching process is performed to remove the oxide layer. A third etching process is performed to remove the remaining etch stop layer. A power rail is formed on the capping layer opposite to the device layer.