The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

Jun. 03, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Kuei-Ming Chen, New Taipei, TW;

Chi-Ming Chen, Hsinchu County, TW;

Shih-Pang Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/58 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10D 84/01 (2025.01); H10D 84/05 (2025.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/76898 (2013.01); H01L 23/3171 (2013.01); H01L 23/481 (2013.01); H01L 23/564 (2013.01); H01L 23/585 (2013.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01); H10D 84/01 (2025.01); H10D 84/05 (2025.01);
Abstract

Semiconductor structures and methods are provided. An exemplary semiconductor structure according to the present disclosure includes a semiconductor substrate including a first region and a second region surrounding the first region, a III-V semiconductor layer disposed directly over the first region, a compound semiconductor device formed in and over the III-V semiconductor layer, a first plurality of conductive features disposed over and electrically coupled to a source contact of the compound semiconductor device, and a seal ring disposed directly over the second region and comprising a second plurality of conductive features, a top surface of a topmost conductive feature of the first plurality of conductive features is higher than a top surface of a topmost conductive feature of the second plurality of conductive features.


Find Patent Forward Citations

Loading…