Isehara, Japan

Atsushi Yamada

This inventor holds 54 USPTO granted patents and 17 published patent applications and 2 EPO patents, primarily in Compound Semiconductor Devices (CPC class H01L). Top assignees: Fujitsu Corporation, Transphorm Japan, Inc., Fujitsu Microelectronics Limited. Active years: 2006-2025.

USPTO Granted Patents = 54 

% Patents Active = 83.3


Average Co-Inventor Count = 1.5

ph-index = 11

Forward Citations = 288(Granted Patents)

Forward Citations (Not Self Cited) = 272(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kawasaki, JP (2006 - 2016)
  • Isehara, JP (2013 - 2019)
  • Hiratsuka, JP (2015 - 2024)

Company Filing History:


Years Active: 2006-2025

Loading Chart...
Loading Chart...
Areas of Expertise:
Compound Semiconductor
Fabrication Method
High Power Device
Gallium Nitride
Power Supply Apparatus
High-Frequency Amplifier
Semiconductor Device
Manufacturing Method
III-N Transistor
Doping Techniques
Electronic Device
54 patents (USPTO):Explore Patents

Title: Atsushi Yamada - Innovator in Semiconductor Technologies

Introduction

Atsushi Yamada is a prominent inventor based in Isehara, Japan, renowned for his contributions to semiconductor technology. With an impressive portfolio of 52 patents, Yamada has played a significant role in advancing innovations in electronic devices and semiconductor manufacturing methods.

Latest Patents

Among his latest patents are notable inventions focusing on semiconductor devices and their manufacturing processes. One key patent describes a semiconductor device that includes a substrate, an insulating layer, and a collection of metal particles on the surface of the insulating layer. This innovative design features a diamond layer that enhances thermal conductivity. By controlling the surface density and particle size of the metal particles, the density of diamond nuclei is effectively managed, resulting in diamond grains that exhibit high thermal conductivity.

Another noteworthy patent pertains to a semiconductor device comprised of a first nitride semiconductor base with several layers of nitride semiconductors stacked upon it. This device design contains a specific ratio of aluminum in the compositions of the semiconductors, enhancing its performance. The configuration aimed at optimizing thermal and electrical properties is a testament to Yamada's expertise and innovative vision in the semiconductor field.

Career Highlights

Yamada has worked with esteemed companies such as Fujitsu Corporation and Transphorm Japan, Inc., where he gained valuable experience and insight into the semiconductor industry. His tenure at these organizations has contributed to his profound understanding of material properties and device engineering, enabling him to create groundbreaking inventions.

Collaborations

Throughout his career, Atsushi Yamada has collaborated with notable colleagues, including Tetsuro Ishiguro and Norikazu Nakamura. These partnerships have fostered an environment of innovation, allowing Yamada to refine his ideas and expand the impact of his inventions within the industry.

Conclusion

Atsushi Yamada's contributions to semiconductor technology are invaluable, as evidenced by his extensive patent portfolio and successful collaborations. His innovative designs and methods continue to shape the future of electronic devices, cementing his legacy as a leading inventor in this critical field.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…