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Yokohama, Japan

Transphorm Japan, Inc.

USPTO Granted Patents = 30

Forward Citations = 390

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26 inventors (with patents filed for the assignee):

Atsushi Yamada (8 out of 54 patents)

Toshihide Kikkawa (6 out of 87 patents)

Yoshihiro Takemae (4 out of 159 patents)

4. Kenji Nukui (4 out of 5 patents)

5. Yoshitaka Watanabe (3 out of 10 patents)

6. Youichi Kamada (2 out of 8 patents)

7. Shinichi Akiyama (2 out of 21 patents)

8. Yuichi Minoura (2 out of 22 patents)

9. Toshihiro Ohki (2 out of 41 patents)

10. Kenji Kiuchi (2 out of 2 patents)

11. Ken Shono (2 out of 5 patents)

12. Shuichi Tomabechi (1 out of 12 patents)

13. Tetsuro Ishiguro (1 out of 15 patents)

14. Tadahiro Imada (1 out of 45 patents)

15. Masato Nishimori (1 out of 11 patents)

30 patents: Sort by Forward Citations

1. 9818840 - Semiconductor device and manufacturing method of semiconductor device (2017-11-14),

2. 9685338 - Compound semiconductor device and method of manufacturing the same (2017-06-20),

3. 9640648 - Semiconductor device and manufacturing method of semiconductor device (2017-05-02),

4. 9620616 - Semiconductor device and method of manufacturing a semiconductor device (2017-04-11),

5. 9425268 - Compound semiconductor device and method of manufacturing the same (2016-08-23),

6. 9349805 - III-n device with dual gates and field plate (2016-05-24),

7. 9299822 - Semiconductor device and manufacturing method of semiconductor device (2016-03-29),

8. 9231075 - Semiconductor device including gate electrode provided over active region in p-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus (2016-01-05),

9. 9224848 - Compound semiconductor device and manufacturing method of the same (2015-12-29),

10. 9142658 - Compound semiconductor device and method of manufacturing the same (2015-09-22),

11. 9142638 - Semiconductor device and manufacturing method of semiconductor device (2015-09-22),

12. 9136107 - Semiconductor device and method for manufacturing semiconductor device (2015-09-15),

13. 9099545 - Compound semiconductor device and method of manufacturing same (2015-08-04),

14. 9099351 - Compound semiconductor device and method of manufacturing the same (2015-08-04),

15. 9059136 - Compound semiconductor device and method of manufacturing the same (2015-06-16),

Transphorm Japan, Inc. is a leading provider of gallium nitride (GaN) power conversion products. The company designs, manufactures, and sells high-performance GaN semiconductors and related power electronics to customers in various industries. With advanced technology and extensive expertise, Transphorm Japan aims to revolutionize power conversion and deliver efficient, compact, and reliable solutions to address the evolving energy needs of the global market.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

30 Patents

#34 in Yokohama

#2,252 in Japan

#21,210 in the World

Yokohama, Japan

Transphorm Japan, Inc.

Forward Citations = 390

26 inventors:

Atsushi Yamada (8 out of 54 patents)

Toshihide Kikkawa (6 out of 87 patents)

Yoshihiro Takemae (4 out of 159 patents)

4. Kenji Nukui (4 out of 5 patents)

5. Yoshitaka Watanabe (3 out of 10 patents)

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