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For the Inventor, By the Inventor

Kawasaki, Japan

Tetsuro Ishiguro

This inventor holds 18 USPTO granted patents and 13 published patent applications and 1 EPO patent, primarily in Quantum Computing. Top assignees: Fujitsu Corporation, Transphorm Japan, Inc.. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tetsuro Ishiguro. Retrieved from https://idiyas.com/inventor/tetsuro-ishiguro

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 

% Patents Active = 94.4

 

Average Co-Inventor Count = 3.1

ph-index = 3

Forward Citations = 32(Granted Patents)


Company Filing History:

goldMedal17 out of 39,378 
 
Fujitsu Corporation
 patents
silverMedal1 out of 30 
 
Transphorm Japan, Inc.
 patents

Years Active: 2013-2026

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Areas of Expertise:
Quantum Computing
Optical Waveguide
Quantum Device
Quantum Circuit
Compound Semiconductor
High Electron Mobility Transistor
Fabrication Method
Power Source Device
Gallium Nitride
Doping
Semiconductor Apparatus
18 patents (USPTO):Explore Patents
1. 12736745 - Optical waveguide, quantum computing device, and method for manufacturing optical waveguide (2026-09-15),
2. 12724205 - Quantum device, quantum computing device, and quantum computing method (2026-09-01),
3. 12694318 - Quantum circuit, quantum computer, and method of manufacturing quantum circuit (2026-07-28),
4. 10992269 - Compound semiconductor device with high power and reduced off-leakage and method for manufacturing the same (2021-04-27),
5. 10847642 - Compound semiconductor device and fabrication method (2020-11-24),
6. 10600901 - Compound semiconductor device and manufacturing method thereof (2020-03-24),
7. 10431656 - Semiconductor crystal substrate with Fe doping (2019-10-01),
8. 10270404 - Compound semiconductor device and method of manufacturing the same (2019-04-23),
9. 9997594 - Gallium nitride based high electron mobility transistor (GaN-HEMT) device with an iron-doped cap layer and method of manufacturing the same (2018-06-12),
10. 9899492 - Compound semiconductor device and method for manufacturing the same (2018-02-20),
11. 9502525 - Compound semiconductor device and method of manufacturing the same (2016-11-22),
12. 9312341 - Compound semiconductor device, power source device and high frequency amplifier and method for manufacturing the same (2016-04-12),
13. 9269799 - Semiconductor apparatus (2016-02-23),
14. 9184241 - Semiconductor apparatus (2015-11-10),
15. 9029868 - Semiconductor apparatus having nitride semiconductor buffer layer doped with at least one of Fe, Si, and C (2015-05-12),

Title: Tetsuro Ishiguro: Innovator in Compound Semiconductor Technology

Introduction

Tetsuro Ishiguro is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of compound semiconductors, holding a total of 15 patents. His work focuses on developing advanced semiconductor devices that enhance performance and efficiency.

Latest Patents

Ishiguro's latest patents include a compound semiconductor device with high power and reduced off-leakage, along with a method for manufacturing the same. This innovative device features a first compound semiconductor layer containing a p-type impurity, a second compound semiconductor layer made of InGaN, an electron transit layer, and an electron supply layer. Another notable patent is for a compound semiconductor device that includes an electron transit layer and an electron supply layer with distinct regions, enhancing the device's functionality.

Career Highlights

Throughout his career, Tetsuro Ishiguro has worked with leading companies in the technology sector, including Fujitsu Corporation and Transphorm Japan, Inc. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to groundbreaking advancements in the field.

Collaborations

Ishiguro has collaborated with notable colleagues such as Atsushi Yamada and Norikazu Nakamura. These partnerships have fostered a creative environment that has led to innovative solutions and developments in semiconductor technology.

Conclusion

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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