The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Feb. 21, 2014
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Tetsuro Ishiguro, Kawasaki, JP;
Norikazu Nakamura, Sagamihara, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/205 (2006.01); H01L 21/02 (2006.01); H01L 29/36 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02502 (2013.01); H01L 21/02576 (2013.01); H01L 21/76224 (2013.01); H01L 29/1075 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01); H01L 29/7787 (2013.01);
Abstract
A compound semiconductor device includes: a substrate; and a compound semiconductor lamination structure formed over the substrate, the compound semiconductor lamination structure including a buffer layer containing an impurity, and an active layer formed over the buffer layer.