The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Sep. 25, 2016
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H03F 3/19 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H03F 1/32 (2006.01); H03F 3/24 (2006.01); H01L 29/201 (2006.01); H02M 1/42 (2007.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H03F 3/19 (2013.01); H01L 29/201 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H03F 1/3247 (2013.01); H03F 3/245 (2013.01); H01L 29/207 (2013.01); H02M 1/4225 (2013.01); H03F 2200/204 (2013.01); H03F 2200/333 (2013.01);
Abstract
A compound semiconductor device includes: a first layer of nitride semiconductor, the first layer being doped with Fe; a channel layer of nitride semiconductor above the first layer; and a barrier layer of nitride semiconductor above the channel layer, wherein the channel layer includes: a two-dimensional electron gas region in which the two-dimensional electron gas exists; and an Al-containing region between the two-dimensional electron gas region and the first layer, an Al concentration in the Al-containing region being 5×10atoms/cmor more and less than 1×10atoms/cm.