The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
May. 31, 2016
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/43 (2006.01); H03F 1/32 (2006.01); H01L 29/51 (2006.01); H01L 29/201 (2006.01); H02M 3/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02576 (2013.01); H01L 29/432 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H03F 1/3247 (2013.01); H01L 29/201 (2013.01); H01L 29/2003 (2013.01); H01L 29/517 (2013.01); H02M 3/28 (2013.01);
Abstract
A compound semiconductor device includes: a carrier transit layer; a carrier supply layer that is formed over the carrier transit layer and is made of InAlN; and a spacer layer that is formed between the carrier transit layer and the carrier supply layer and is made of at least one of AlGaN and InAlGaN.