The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Jul. 11, 2018
Applicant:
Fujitsu Limited, Kawasaki, JP;
Inventors:
Tetsuro Ishiguro, Kawasaki, JP;
Atsushi Yamada, Hiratsuka, JP;
Junji Kotani, Atsugi, JP;
Norikazu Nakamura, Sagamihara, JP;
Kozo Makiyama, Kawasaki, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/072 (2012.01); H03F 3/19 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/207 (2006.01); H01L 21/02 (2006.01); H03F 1/32 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H03F 3/19 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02579 (2013.01); H01L 21/02581 (2013.01); H01L 29/207 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H03F 1/3247 (2013.01); H01L 29/2003 (2013.01);
Abstract
A compound semiconductor device includes a first compound semiconductor layer containing a p-type impurity, a second compound semiconductor layer disposed over the first compound semiconductor layer and containing InGaN, an electron transit layer disposed over the second compound semiconductor layer, and an electron supply layer disposed over the electron transit layer.