Kozo Makiyama

This inventor holds 73 USPTO granted patents and 14 published patent applications and 6 EPO patents, primarily in Compound Semiconductor Devices (CPC class H01L). Top assignees: Fujitsu Corporation, Fujitsu Quantum Devices Limited, Eudyna Devices Inc.. Active years: 1998-2025.

USPTO Granted Patents = 73 (Patent Applications = 14)

% Patents Active = 78.1

EPO Patents = 6 (Patent Applications = 8)

Average Co-Inventor Count = 1.7

ph-index = 6

Forward Citations = 149(Granted Patents)

Forward Citations (Not Self Cited) = 133(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Machida, JP (2003 - 2004)
Kawasaki, JP (1998 - 2023)

Company Filing History:

Fujitsu Quantum Devices Limited

4. 4 out of 834,453

Other

patents

where one patent can have more than one assignee

Years Active: 1998-2025

Loading Chart...

Areas of Expertise:

Compound Semiconductor Device

Manufacturing Method

HEMT Technology

High-Frequency Amplifier

Dopant Layer

Diffusion Preventing Layer

Gate Insulator

Power Supply Unit

Electrode Structure

Current Collapse Phenomenon

Insulating Films

Mesa Structure

73 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12283922 - Manufacturing method for compound semiconductor device (2025-04-21),

2. 11791384 - Semiconductor device (2023-10-17),

3. 11688663 - Semiconductor device, semiconductor device fabrication method, and electronic device (2023-06-27),

4. 11646366 - Semiconductor device (2023-05-09),

5. 11094813 - Compound semiconductor device, method of manufacturing compound semiconductor device, and amplifier (2021-08-17),

6. 11024730 - Nitride semiconductor device and manufacturing method for the same (2021-06-01),

7. 10992269 - Compound semiconductor device with high power and reduced off-leakage and method for manufacturing the same (2021-04-27),

8. 10964805 - Compound semiconductor device (2021-03-30),

9. 10916645 - Compound semiconductor device including protective layer and ohmic electrode (2021-02-09),

10. 10804358 - Compound semiconductor device and method with high concentration dopant layer in regrown compound semiconductor (2020-10-13),

11. 10796917 - Method for manufacturing gate insulator for HEMT (2020-10-06),

12. 10727305 - Semiconductor device and fabrication method therefor, and high-frequency amplifier (2020-07-28),

13. 10312094 - [object Object] (2019-06-04),

14. 10263103 - Semiconductor apparatus (2019-04-16),

15. 10249749 - Semiconductor device and method for manufacturing the same (2019-04-02),

Title: The Innovative Journey of Inventor Kozo Makiyama

Introduction: Kozo Makiyama is a renowned inventor hailing from Kawasaki, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kozo Makiyama holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Kozo Makiyama has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant technological breakthroughs.

Collaborations: Throughout his career, Kozo Makiyama has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Kozo Makiyama's relentless pursuit of innovation and his passion for creating technology that makes a difference have solidified his position as a visionary inventor in the global tech industry.