The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Mar. 23, 2021
Fujitsu Limited, Kawasaki, JP;
Junya Yaita, Atsugi, JP;
Junji Kotani, Atsugi, JP;
Atsushi Yamada, Hiratsuka, JP;
Kozo Makiyama, Kawasaki, JP;
FUJITSU LIMITED, Kawasaki, JP;
Abstract
A semiconductor device includes an underlayer made of a first nitride semiconductor, a first buffer layer made of a second nitride semiconductor, provided on the underlayer, and subjected to compressive stress from the underlayer in an in-plane direction which is perpendicular to a thickness direction of the underlayer, a second buffer layer made of a third nitride semiconductor, provided on the first buffer layer, and subjected to compressive stress from the first buffer layer in the in-plane direction, a channel layer made of a fourth nitride semiconductor, provided on the second buffer layer, and subjected to compressive stress from the second buffer layer in the in-plane direction, and a barrier layer made of a fifth nitride semiconductor, and provided above the channel layer.