The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Oct. 11, 2016
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventor:
Kozo Makiyama, Kawasaki, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/778 (2006.01); H01L 29/12 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01); H01L 29/43 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7783 (2013.01); H01L 29/122 (2013.01); H01L 29/2003 (2013.01); H01L 29/4232 (2013.01); H01L 29/432 (2013.01); H01L 29/517 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/41766 (2013.01);
Abstract
A semiconductor apparatus includes an electron transit layer formed of a nitride semiconductor over a substrate; an electron supply layer formed of a nitride semiconductor including In over the electron transit layer; a cap layer formed of a nitride semiconductor over the electron supply layer; an insulation film formed over the cap layer; a source electrode and a drain electrode formed over the electron transit layer or the electron supply layer; and a gate electrode formed over the cap layer. A quantum well is formed by the cap layer.