The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Nov. 30, 2018
Applicant:
Fujitsu Limited, Kawasaki, JP;
Inventor:
Kozo Makiyama, Kawasaki, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/43 (2006.01); H01L 29/40 (2006.01); H01L 29/08 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 21/043 (2013.01); H01L 21/28587 (2013.01); H01L 29/66 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02458 (2013.01); H01L 21/02576 (2013.01); H01L 21/0485 (2013.01); H01L 29/0843 (2013.01); H01L 29/401 (2013.01); H01L 29/432 (2013.01);
Abstract
A compound semiconductor device includes: a compound semiconductor area including, at an upper most portion, a protective layer made of a compound semiconductor; and an ohmic electrode provided on the compound semiconductor area, the ohmic electrode being away from the protective layer in plan view and being not in contact with the protective layer.