The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Oct. 30, 2018
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventor:
Kozo Makiyama, Kawasaki, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H01L 29/201 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 29/1033 (2013.01); H01L 29/201 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/41766 (2013.01);
Abstract
A semiconductor device includes a nitride semiconductor stacked structure that includes a channel layer containing GaN and a barrier layer containing In and further includes a cap layer that contains GaN on the outermost surface but does not contain Al. The cap layer has a Ga/N ratio that varies along a thicknesswise direction.