The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Apr. 16, 2019
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 29/778 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 23/495 (2006.01); H02M 5/458 (2006.01); H03F 3/193 (2006.01); H03F 1/32 (2006.01); H03F 3/24 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01); H02M 3/335 (2006.01); H02M 3/337 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28264 (2013.01); H01L 21/02178 (2013.01); H01L 21/02194 (2013.01); H01L 21/02241 (2013.01); H01L 21/02255 (2013.01); H01L 23/49562 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H02M 5/458 (2013.01); H03F 1/3247 (2013.01); H03F 3/193 (2013.01); H03F 3/245 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01); H01L 29/42368 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/4903 (2013.01); H01L 2924/181 (2013.01); H02M 3/337 (2013.01); H02M 3/33576 (2013.01); H02M 2001/007 (2013.01);
Abstract
A semiconductor device includes: a first semiconductor layer formed, on a substrate, of a nitride semiconductor; a second semiconductor layer formed, on the first semiconductor layer, of a nitride semiconductor; a source electrode formed on the second semiconductor layer; a drain electrode formed on the second semiconductor layer; a metal oxide film formed, between the source electrode and the drain electrode, on the second semiconductor layer; and a gate electrode formed on the metal oxide film. The metal oxide film includes AlOand InO. AlO/InOin the metal oxide film is greater than or equal to 3.