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Naoya Okamoto

USPTO Granted Patents = 53 (Patent Applications = 10)

EPO Patents = 5

Average Co-Inventor Count = 2.0

ph-index = 6

Forward Citations = 202(Granted Patents)

Forward Citations (Not Self Cited) = 196(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Kanagawa, JP (1999 - 2000)
Kawasaki, JP (1995 - 2015)
Isehara, JP (2014 - 2021)

Company Filing History:

53 out of 39,244

Fujitsu Corporation

Years Active: 1995-2025

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Areas of Expertise:

Compound Semiconductor Device

Semiconductor Device

High-Frequency Circuit Board

Antenna Module

Gate Insulator

Power Supply Device

High-Frequency Amplifier

Field-Effect Transistor

Multilayer Wiring Structure

Photosynthesis Apparatus

Via Wiring

Ohmic Contacts

53 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12369345 - Compound semiconductor device, amplifier, and method for manufacturing compound semiconductor device (2025-07-22),

2. 12193151 - High-frequency circuit board and antenna module (2025-01-07),

3. 12176265 - Semiconductor device, having via wiring, method of manufacturing semiconductor device having via wiring, and electronic apparatus with semiconductor device having via wiring (2024-12-24),

4. 11171242 - Semiconductor device and method for manufacturing semiconductor device (2021-11-09),

5. 10964805 - Compound semiconductor device (2021-03-30),

6. 10796917 - Method for manufacturing gate insulator for HEMT (2020-10-06),

7. 10680073 - Semiconductor device and manufacturing method thereof (2020-06-09),

8. 10483185 - Semiconductor device and method for manufacturing same (2019-11-19),

9. 10468514 - Semiconductor device and method for producing the same, power supply device, and high-frequency amplifier (2019-11-05),

10. 10316417 - Photosynthesis apparatus (2019-06-11),

11. 10312094 - [object Object] (2019-06-04),

12. 10084059 - Semiconductor device and manufacturing method of semiconductor device (2018-09-25),

13. 10056460 - Semiconductor device and manufacturing method thereof (2018-08-21),

14. 10043727 - Compound semiconductor device and method of manufacturing the same (2018-08-07),

15. 9966463 - Semiconductor device and method for producing same having multilayer wiring structure with contact hole having hydrophobic film formed on side surface of the contact hole (2018-05-08),

Title: Naoya Okamoto - Innovative Inventor from Isehara

Introduction: Naoya Okamoto is a renowned inventor hailing from Isehara, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Naoya Okamoto holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous commitment to pushing the boundaries of technological advancements.

Career Highlights: With over two decades of experience in the industry, Naoya Okamoto has worked with leading tech companies and research institutions, spearheading projects that have revolutionized various sectors.

Collaborations: Throughout his career, Naoya Okamoto has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange that has led to the development of cutting-edge solutions.

Conclusion: Naoya Okamoto's passion for innovation and his relentless pursuit of excellence have solidified his position as a visionary inventor, shaping the future of technology and inspiring the next generation of inventors worldwide.

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